AM3520C preliminary publication order number: ds-am3520_f analog power 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. n & p-channel 20-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol n-channe l p-channe l units v ds 20 -20 v gs 12 12 t a =25 o c 3.7 -2.7 t a =70 o c 2.9 -2.1 i dm 8 -8 i s 1.05 -1.05 a t a =25 o c t a =70 o c t j , t stg o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w 1.15 0.7 -55 to 150 typ max typ max t <= 10 sec 93 110 93 110 steady state 130 150 130 150 maximum junction-to-ambient a o c/w unit p-channel n-channel r thja thermal resistance ratings parameter symbol s 2 d 2 g 2 p-channel mosfet d 1 s 1 g 1 n-channel mosfet tsop-6 top view d1 s1 d2 g1 s2 g2 12 3 65 4 v ds (v) r ds(on) ( ) i d (a) 0.058 @ v gs = 4.5v 3.7 0.082 @ v gs = 2.5v 3.1 0.160 @ v gs = 1.8v 2.2 0.112 @ v gs = -4.5v -2.7 0.172 @ v gs = -2.5v -2.2 0.210 @ v gs = -1.8v -2.0 20 product summary -20
AM3520C preliminary publication order number: ds-am3520_f analog power 2 analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically dis claims any and all liability, including without lim itation special, consequential or incidental damages. ?typical? parameters which may be provide d in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situ ation where personal injury or death may occur. should buyer purchase or use apl products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. ch min typ max v gs = v ds , i d = 250 ua n 1 v gs = v ds , i d = -250 ua p -1 v ds = 0 v, v gs = 12 v n 100 v ds = 0 v, v gs = -12 v p -100 v ds = 16 v, v gs = 0 v n 1 v ds = -16 v, v gs = 0 v p -1 v ds = 16 v, v gs = 0 v, t j = 55 o c n 10 v ds = -16 v, v gs = 0 v, t j = 55 o c p -10 v ds = 5 v, v gs = 4.5 v n 5 v ds = -5 v, v gs = -4.5 v p -5 v gs = 4.5 v, i d = 3.7 a n 0.058 v gs = -4.5 v, i d = 3.1 a p 0.112 v gs = 2.5 v, i d = 2.7 a n 0.082 v gs = -2.5 v, i d = -2.2 a p 0.172 v gs = 1.8 v, i d = 2.2 a n 0.160 v gs = -1.8 v, i d = -2.0 a p 0.210 v ds = 5 v, i d = 3.7 a n 10 v ds = -5 v, i d = 3.1 a p 5 i s = 1.05 a, v gs = 0 v n 0.80 i s = -1.05 a, v gs = 0 v p -0.83 n 7.5 p 3.8 n 0.6 p 0.6 n 1.0 p 1.5 n 5 p 5 n 12 p 15 n 13 p 20 n 7 p 20 forward tranconductance a g fs s gate-source charge q gs a drain-source on-resistance a r ds(on) ns n-chaneel v dd =15v, v gs =4.5v, i d =1a , r gen =15 , p-channel v dd =-15v, v gs =-4.5v, i d =-1a r gen =15 fall-time t f turn-off delay time t d(on) t r t d(off) turn-on delay time rise time limits i dss unit on-state drain current a i d(on) i gss ua ua zero gate voltage drain current specifications (t a = 25 o c unless otherwise noted) ua static test conditions v symbol parameter gate-body leakage current gate-threshold voltage v gs(th) s nc gate-drain charge q gd dynamic b n-channel v ds =15v, v gs =4.5v, i d =2.7a p-channel v ds =-15v, v gs =-4.5v, i d =-3.1a diode forward voltage a v sd total gate charge q g
AM3520C preliminary publication order number: ds-am3520_f analog power 3 typical electrical characteristics (n-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 10 12 i d - drain current (a) r ds(on) - normalized on-resistance 4.5v 2.5v 0 2 4 6 8 10 12 0 1 2 3 v ds - drain-to-source voltage (v) i d - drain current (a) v gs = 4.5v 2.0v 2.5v 0 2 4 6 8 10 0.5 1 1.5 2 2.5 3 v gs - gate-to-source voltage (v) i d - drain current (a) t a = -55 o c 25 o c 125 o c 0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss 0 2 4 6 8 10 0 2 4 6 8 q g, gate c harge ( nc ) vgs voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction tempertaure ( o c) r ds(on) - on-resistance (normalized) v gs = 4.5v
AM3520C preliminary publication order number: ds-am3520_f analog power 4 typical electrical characteristics (n-channel) normalized thermal transient impedance, junction-to-ambi ent single pulse power threshold voltage source-drain diode forward voltage on-resistance vs. gate-to source voltage 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd, - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 0.02 0.06 0.1 0.14 0.18 0.22 1 2 3 4 5 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - temperature ( o c) v gs(th) , variance (v) i d = 250 a 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 time (sec) power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (sec) normailized effective transient thermal impedance r ja (t) = r(t) + r ja r ja = 130 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5
AM3520C preliminary publication order number: ds-am3520_f analog power 5 typical electrical characteristics (p-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 v ds - drain-to-soruce voltage (v) i d - drain current (a) -2.5v -2.0v -1.8v v gs =- 4.5v 0 1 2 3 4 5 0.5 1 1.5 2 2.5 3 v gs - gate-to-source voltage (v) i d - drain current (a) t a = -55 o c 125 o c 25 o c 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 0 1 2 3 4 5 6 i d - drain current (a) r ds(on) - normalized on-resistance -4.5v -2.5v 0 100 200 300 400 500 600 0 5 10 15 20 v ds - drain-to- source voltage (v) c - capacitance (pf) c iss c rss c oss -10 -8 -6 -4 -2 0 0 3 6 9 12 15 qg, charge (nc) vgs voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) , - on-resistance (normalized) v gs = -4.5v
AM3520C preliminary publication order number: ds-am3520_f analog power 6 typical electrical characteristics (p-channel) normalized thermal transient impedance, junction-to-ambi ent single pulse power threshold voltage source-drain diode forward voltage on-resistance vs. gate-to source voltage 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 time (sec) power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (sec) normailized effective transient thermal impedance r ja (t) = r(t) + r ja r ja = 130 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 1 2 3 4 5 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j , - temperature ( o c) v gs(th) variance (v) i d =- 250 a
AM3520C preliminary publication order number: ds-am3520_f analog power 7 package information tsop-6: 6lead
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